SES8-808A/B/C-01

8W 808nm 190µm High Power Single Emitter Laser Diode on Submount

The II-VI Laser Enterprise SES8-808A/B/C-01 single emitter laser diode has been designed to provide the high output power, high coupling efficiency and high reliability required for both solid-state laser pumping and direct laser applications. The proprietary E2 front mirror passivation process, developed at our Zurich site, prevents Catastrophic Optical Damage (COD) to the laser diode facet even at extremely high output powers. The single emitter laser diodes are p-side down mounted on an optimized submount providing very low thermal resistance.

 

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Applications

  • Solid-state laser pumping
  • Medical
  • Analytical
  • Printing

Features

  • 3.6mm x 0.4mm laser diode
  • 190µm wide emitter
  • 8W operating power (p-side down mounted)
  • Highly reliable single quantum well MBE structure
  • RoHS compliant

 

II-VI Laser Enterprise GmbH, Binzstrasse 17, CH-8045 Zurich, Switzerland I Terms & Conditions