4W 808nm 90µm High Power Single Emitter Laser Diode on Submount

The II-VI Laser Enterprise SES4-808A/B/C-01 single emitter laser diode has been designed to provide the high output power, high coupling efficiency and high reliability required for both solid-state laser pumping and direct laser applications. The proprietary E2 front mirror passivation process, developed at our Zurich site, prevents Catastrophic Optical Damage (COD) to the laser diode facet even at extremely high output powers. The single emitter laser diodes are p-side down mounted on an optimized submount providing very low thermal resistance.


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  • Solid-state laser pumping
  • Medical
  • Analytical
  • Printing


  • 3.6mm x 0.4mm laser diode
  • 90µm wide emitter
  • 4W operating power (p-side down mounted)
  • Highly reliable single quantum well MBE structure
  • RoHS compliant


II-VI Laser Enterprise GmbH, Binzstrasse 17, CH-8045 Zurich, Switzerland
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